1. Qhov kawg lub tshuab nqus tsev kawm ntawv ntawm etching chamber: Tsawg dua los yog sib npaug rau 9.0×10-5Pa;
2. Etching cov ntaub ntawv: silicon, quartz, III.-V compounds, ceramics thiab ntau yam hlau, non-metallic hard films, thiab lwm yam.;
3. Etching tus nqi: ntau dua los yog sib npaug ntawm 10 nm ~ 200 nm / min (nyob ntawm cov khoom tshwj xeeb etching thiab txheej txheem);
4. Ion qhov chaw: Φ150mm txoj kab uas hla DC ion qhov chaw;
5. Ar+ ion zog ntau: 100 ~ 1000 eV;
6. Ion beam ceev: 0 ~ 1 mA / cm2.